2SC5338 datasheet(4/10 Pages) RENESAS

Il numero della parte	2SC5338

Spiegazioni elettronici	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

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Produttore elettronici	RENESAS [Renesas Technology Corp]

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Data Sheet P10940EJ2V0DS

2SC5338

ELECTRICAL CHARACTERISTICS (TA = +25

°°°°C)

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

DC Characteristics

Collector Cut-off Current

ICBO

VCB = 20 V, IE = 0 mA

–

1.5

µA

Emitter Cut-off Current

IEBO

VBE = 2 V, IC = 0 mA

–

1.5

µA

DC Current Gain

hFE

Note 1

VCE = 5 V, IC = 50 mA

–

250

–

RF Characteristics

Gain Bandwidth Product

VCE = 5 V, IC = 50 mA

–

6.0

–

GHz

Insertion Power Gain

S21e2 VCE = 5 V, IC = 50 mA, f = 1 GHz

8.5

–

Noise Figure

VCE = 5 V, IC = 50 mA, f = 1 GHz

–

3.5

Reverse Transfer Capacitance

Cre

Note 2

VCB = 5 V, IE = 0 mA, f = 1 MHz

–

1.0

2.0

2nd Order Intermoduration Distortion

IM2

VCE = 5 V

–

−55

–

IC = 50 mA,

Vin = 105 dB

µV/75 Ω,

f = 190

− 90 MHz

VCE = 10 V

−63

–

3rd Order Intermoduration Distortion

IM3

VCE = 5 V

–

−76

–

IC = 50 mA,

Vin = 105 dB

µV/75 Ω,

f = 2

× 190 − 200 MHz

VCE = 10 V

–

−83

–

Notes 1. Pulse measurement: PW

≤ 350

µs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

hFE CLASSIFICATION

Rank

Marking

hFE Value

50 to 100

80 to 160

125 to 250

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