MAT04EY datasheet(3/12 Pages) AD

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ELECTRICAL CHARACTERISTICS (at –25 C ≤ T

85 C for MAT04E, –40 C

≤ TA 85 C for MAT04F, unless

otherwise noted. Each transistor is individually tested. For matching parameters (VOS, IOS) each dual transistor combination is

verified to meet stated limits. All tests made at endpoints unless otherwise noted.)

MAT04E

MAT04F

Parameter

Symbol

Conditions

Min

Typ

Max

Min

Typ

Max

Unit

Current Gain

hFE

µA ≤ I

≤ 1 mA

0 V

≤ VCB ≤ 30 V1

225

625

200

500

Offset Voltage

VOS

µA ≤ IC ≤ 1 mA

0 V

≤ V

≤ 30 V2

260

120

520

µV

Average Offset

TCVOS

IC = 100

µA

Voltage Drift

VCB = 0 V

0.2

0.4

µV/°C

Input Bias Current

IC = 100

µA

0 V

≤ VCB ≤ 30 V

160

445

200

500

Input Offset Current

IOS

IC = 100

µA

VCB = 0 V

Average Offset

TCIOS

IC = 100

µA

Current Drift

VCB = 0 V

100

pA/

°C

Breakdown Voltage

BVCEO

IC = 10

µA40

Collector-Base

ICBO

VCB = 40 V

Leakage Current

0.5

Collector-Emitter

ICES

VCE = 40 V

Leakage Current

Collector-Substrate

ICS

VCS = 40 V

Leakage Current

0.7

MAT04

–3–

REV. D

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