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HCS500T-I/P Scheda tecnica(PDF) 19 Page - Microchip Technology |
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HCS500T-I/P Scheda tecnica(HTML) 19 Page - Microchip Technology |
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19 / 34 page ![]() © 2002 Microchip Technology Inc. DS40153C-page 19 HCS500 8.0 ELECTRICAL CHARACTERISTICS FOR HCS500 Absolute Maximum Ratings† Ambient temperature under bias............................................................................................................ -40°C to +125°C Storage temperature .............................................................................................................................. -65 °C to +150°C Voltage on any pin with respect to VSS (except VDD)......................................................................... -0.6V to VDD +0.6V Voltage on VDD with respect to Vss ..................................................................................................................0 to +7.5V Total power dissipation (Note) ............................................................................................................................. 700 mW Maximum current out of VSS pin ...........................................................................................................................200 mA Maximum current into VDD pin .............................................................................................................................. 150 mA Input clamp current, IIK (VI < 0 or VI > VDD) ......................................................................................................... ± 20 mA Output clamp current, IOK (VO < 0 or VO >VDD) .................................................................................................. ± 20 mA Maximum output current sunk by any I/O pin..........................................................................................................25 mA Maximum output current sourced by any I/O pin .................................................................................................... 25 mA Note: Power dissipation is calculated as follows: PDIS = VDD x {IDD - ∑ IOH} + ∑ {(VDD–VOH) x IOH} + ∑(VOl x IOL) † NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. |
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