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LM3410XMFE Scheda tecnica(PDF) 11 Page - Texas Instruments |
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LM3410XMFE Scheda tecnica(HTML) 11 Page - Texas Instruments |
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11 / 49 page ![]() VOUT - KVIN D = VOUT VOUT x ILED K = VIN x IIN '¶ K VOUT VIN = VOUT - VIN D = VOUT 1 - D 1 1 = c D = VOUT VIN ¨ © § ¸ ¹ · = 2'iL DTS 'i L = ¨¨ © § L VIN ¸¸ ¹ · ¨¨ © § 2L VIN ¸¸ ¹ · x DTS t L i L i ' S T S DT ( ) t L I L VIN L V V OUT IN - LM3410, LM3410Q www.ti.com SNVS541G – OCTOBER 2007 – REVISED MAY 2013 Figure 17. Inductor Current (3) The Duty Cycle (D) for a Boost converter can be approximated by using the ratio of output voltage (VOUT) to input voltage (VIN). (4) Therefore: (5) Power losses due to the diode (D1) forward voltage drop, the voltage drop across the internal NMOS switch, the voltage drop across the inductor resistance (RDCR) and switching losses must be included to calculate a more accurate duty cycle (See Calculating Efficiency and Junction Temperature for a detailed explanation). A more accurate formula for calculating the conversion ratio is: Where • η equals the efficiency of the LM3410 application. (6) Or: (7) Therefore: (8) Inductor ripple in a LED driver circuit can be greater than what would normally be allowed in a voltage regulator Boost and Sepic design. A good design practice is to allow the inductor to produce 20% to 50% ripple of maximum load. The increased ripple shouldn’t be a problem when illuminating LEDs. Copyright © 2007–2013, Texas Instruments Incorporated Submit Documentation Feedback 11 Product Folder Links: LM3410 LM3410Q |
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