CD74ACT573M datasheet(4/14 Pages) NXP

4 / 14 page

BZB84_SER_3

Product data sheet

Rev. 03 — 9 June 2009

4 of 14

NXP Semiconductors

BZB84 series

Dual Zener diodes

[1]

tp = 100 µs; square wave; Tj =25 °C prior to surge

[2]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Soldering points at pins 1 and 2.

Characteristics

[1]

Pulse test: tp ≤ 300 µs; δ≤ 0.02.

Per device

Ptot

total power dissipation

Tamb ≤ 25 °C

[2] -

300

junction temperature

150

°C

Tamb

ambient temperature

−55

+150

°C

Tstg

storage temperature

−65

+150

°C

Table 5.

Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per device; single diode loaded

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1] -

417

K/W

Rth(j-sp)

thermal resistance from

junction to solder point

[2] -

100

K/W

Table 7.

Characteristics

Tj =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

forward voltage

IF =10mA

[1] -

0.9

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