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MP6900DS Scheda tecnica(PDF) 2 Page - Monolithic Power Systems

Il numero della parte MP6900DS
Spiegazioni elettronici  Fast Turn-off Intelligent Controller
PDF  12 Pages
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Produttore elettronici  MPS [Monolithic Power Systems]
Homepage  http://www.monolithicpower.com
Logo MPS - Monolithic Power Systems

MP6900DS Scheda tecnica(HTML) 2 Page - Monolithic Power Systems

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MP6900- FAST TURN-OFF INTELLIGENT CONTROLLER
MP6900 Rev. 1.12
www.MonolithicPower.com
2
9/19/2012 MPS Proprietary Information. Patent Protected. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2012 MPS. All Rights Reserved.
ORDERING INFORMATION
Part Number
Package
Top Marking
MP6900DJ*
TSOT23-5
6D
MP6900DS**
SOIC-8
MP6900DS
MP6900DQ***
QFN6 (3x3mm)
5D
* For Tape & Reel, add suffix –Z (e.g. MP6900DJ–Z).
For RoHS Compliant Packaging, add suffix –LF (e.g. MP6900DJ–LF–Z)
** For Tape & Reel, add suffix –Z (e.g. MP6900DS–Z).
For RoHS Compliant Packaging, add suffix –LF (e.g. MP6900DS–LF–Z)
*** For Tape & Reel, add suffix –Z (e.g. MP6900DQ–Z).
For RoHS Compliant Packaging, add suffix –LF (e.g. MP6900DQ–LF–Z)
PACKAGE REFERENCE
TOP VIEW
VG
VSS
VDD
1
2
3
5
4
PGND
VD
PGND
EN
NC
VD
VG
NC
VDD
VSS
1
2
3
4
8
7
6
5
TOP VIEW
TSOT23-5
SOIC-8
QFN6 (3x3mm)
ABSOLUTE MAXIMUM RATINGS
(1)
VDD to Vss ......................................-0.3V to +27V
PGND to VSs ................................-0.3V to +0.3V
VG to VSS ......................................... -0.3V to VCC
VD to VSS .....................................-0.7V to +180V
EN to VSS .....................................-0.3V to +6.5V
Maximum Operating Frequency............. 400kHz
Continuous Power Dissipation (TA = +25°C)
(2)
SOIC8 ...................................................... 1.39W
TSOT23-5 ................................................ 0.57W
QFN6 (3x3mm) .......................................... 2.5W
Junction Temperature...............................150
°C
Lead Temperature (Solder).......................260
°C
Storage Temperature .............. -55°C to +150
°C
Recommended Operation Conditions
(3)
VDD to Vss ............................................8V to 24V
Operating Junction Temp. (TJ).... -40°C to +125°C
Thermal Resistance
(4)
θJA
θJC
SOIC8..................................... 90 ...... 45...
°C/W
TSOT23-5.............................. 220 .... 110..
°C/W
QFN6 (3x3mm)....................... 50 ...... 12...
°C/W
Notes:
1) Exceeding these ratings may damage the device.
2) The maximum allowable power dissipation is a function of the
maximum junction temperature. TJ(MAX) the junction-to-
ambient thermal resistance θJA and the ambient temperature
TA. The maximum allowable power dissipation at any ambient
temperature is calculated using: PD(MAX)=(TJ(MAX)-TA)/ θJA.
Exceeding the maximum allowable power dissipation will
cause excessive die temperature, and the regulator will go
into thermal shutdown. Internal thermal shutdown circuitry
protects the device from permanent damage.
3) The device is not guaranteed to function outside of its
operating conditions.
4) Measured on JESD51-7, 4-layer PCB.



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