MICROWAVE

DATASHEET | AUGUST 2013

© 2013 EMCORE Corporation

satcom-sales@emcore.com

www.emcore.com

Information contained herein is deemed to be reliable and accurate as of the issue date. EMCORE reserves the right to change the design or specifications at any time without notice.

+1 626-293-3400

Absolute Maximum Ratings

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress

ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in

the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect

device reliability.

Parameter

Symbol

Condition

Min

Max

Unit

Operating Temperature Range of Baseplate

T

OP

Continuous

-40

+65

˚C

Storage Temperature

T

STG

-

-40

+85

˚C

RF Input Power

P

IN

60 Seconds

-

+20

dBm

Laser Forward dc Current

-

-

25

120

mA

Photodiode Reverse Voltage

V

RPD

-

200

10

V

Laser Reverse Voltage

-

-

-

1

V

ESD

-

HMB: R = 1500 Ohm, C = 100 pF

-500

500

V

TEC Current

I

TEC

Continuous

-1.9

1.9

A

Electrical Characteristics

Parameter

Specifications

Unit

Wavelength

1310 to + 30

nm

10

MHz

Optical Power, Typical @ ITH +55 mA

8 (min)

dBm

Optical Power Stability vs. Temperature

+ 15

%

DC Modulations Gain, Typical

0.24

-

1. Specifications guaranteed when unit is connected to an optical path with return loss >35 dB.

2. No RF Input.

DC

Parameter

Symbol

Condition

Min

Max

Units

Laser Bias

I

OP

25°C

-

65

mA

Threshold Current

I

TH

25°C

-

26

mA

Forward Voltage

V

F

I

-

6

V

Thermo Electric Cooler

I

TEC

-

-1.1

-

A

Thermistor

R

TH

25°C

9.5

10

k

Ω

Thermistor Temperature Coefficient

TE

TH

25°C

-

4.4

% / °C

Pin

Description

A

Thermistor

B

TEC (-)

C

Thermistor

D

TEC (+)

E

Laser Bias

F

Ground

G

Monitor Photodiode

Seven-Pin Miniature Rectangular Connector

1542 22 GHz 1310 nm

Microwave DFB Laser