STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5

Electrical characteristics

Doc ID 023468 Rev 2

5/22

The built-in back-to-back Zener diodes have been specifically designed to enhance not only

the device’s ESD capability, but also to make them capable of safely absorbing any voltage

transients that may occasionally be applied from gate to source. In this respect, the Zener

voltage is appropriate to achieve efficient and cost-effective protection of device integrity.

The integrated Zener diodes thus eliminate the need for external components.

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Turn-on delay time

Rise time

Turn-off delay time

Fall time

(see Figure 22)

-

19

17.6

44

10

-

ns

ns

ns

ns

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Source-drain current

Source-drain current (pulsed)

-

14

56

A

A

(1)

1.

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward on voltage

-

1.5

V

Reverse recovery time

Reverse recovery charge

Reverse recovery current

di/dt = 100 A/µs,

(see Figure 21)

-

445

8.2

37

ns

μC

A

Reverse recovery time

Reverse recovery charge

Reverse recovery current

di/dt=100 A/µs,

Tj=150 °C

(see Figure 21)

-

580

10

35

ns

μC

A

Table 8.

Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

30

-

-

V