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BFQ591 Scheda tecnica(PDF) 3 Page - NXP Semiconductors |
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BFQ591 Scheda tecnica(HTML) 3 Page - NXP Semiconductors |
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3 / 11 page ![]() NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFQ591 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS Note 1. Ts is the temperature at the soldering point of the collector pin. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 3V IC collector current (DC) − 200 mA Ptot total power dissipation Ts ≤ 90 °C; note 1 − 2.25 W Tstg storage temperature −65 +150 °C Tj junction temperature − 175 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-s thermal resistance from junction to soldering point Ts ≤ 90 °C; note 1 38 K/W Rev. 04 - 2 October 2007 3 of 11 |
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