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AVD035P Scheda tecnica(PDF) 1 Page - Advanced Semiconductor |
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AVD035P Scheda tecnica(HTML) 1 Page - Advanced Semiconductor |
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1 / 1 page ![]() A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS T C = 25 OC SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 10 mA 65 V BVCER IC = 10 mA RBE = 10 Ω 65 V BVEBO IE = 1 mA 3.5 V ICES VCE = 50 V 5.0 mA hFE VCE = 5.0 V IC = 500 mA 15 120 --- PG ηη C VCC = 50 V POUT = 35 W f = 1025 - 1150 MHz 10 35 dB % NPN SILICON RF POWER TRANSISTOR AVD035P DESCRIPTION: The ASI AVD035P is Designed for FEATURES: • • • Omnigold™ Metalization System MAXIMUM RATINGS IC 2.5 A PEAK VCB 55 V PDISS 100 W PEAK TJ -65 OC to +200 OC TSTG -65 OC to +150 OC θθ JC 1.0 OC/W PACKAGE STYLE .280 4L PILL (A) ORDER CODE: ASI10559 MINIMUM inches / mm .004 / 0.10 1.000 / 25.40 .050 / 1.27 B C D E F A MAXIMUM .065 / 1.65 .145 / 3.68 .007 / 0.18 inches / mm .205 / 5.21 DIM .095 / 2.41 .105 / 2.67 F E A .100x45° D B C ØG G .275 / 6.99 .285 / 7.21 .195 / 4.95 |
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