ASI10607 datasheet(1/1 Pages) ASI

Il numero della parte	ASI10607

Spiegazioni elettronici	NPN SILICON RF POWER TRANSISTOR

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Produttore elettronici	ASI [Advanced Semiconductor]

Homepage	http://www.advancedsemiconductor.com

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A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

CHARACTERISTICS T

C = 25

OC

SYMBOL

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM

UNITS

BVCEO

IC = 50 mA

35

V

BVCER

IC = 50 mA

RBE = 10

Ω

60

V

BVEBO

IE = 10 mA

4.0

V

ICES

VE = 28 V

5

mA

hFE

VCE = 5.0 V

IC = 1.0 A

10

100

---

Cob

VCB = 28 V

f = 1.0 MHz

80

pF

GPE

IMD3

VCE = 25 V

ICQ = 3.2 A

f = 225 MHz

PREF = 16 W

Vision = -8 dB

Snd. = -7 dB

Side Band = -16 dB

13.5

14.5

-55

dB

dBc

NPN SILICON RF POWER TRANSISTOR

HF75-28S

DESCRIPTION:

The

ASI HF75-28S is Designed for

FEATURES:

• P

G = 18 dB min. at 75 W/30 MHz

• IMD

3 = -30 dBc max. at 75 W(PEP)

• Omnigold™ Metalization System

MAXIMUM RATINGS

IC

10 A

VCB

60 V

VCE

35 V

PDISS

140 W @ TC = 25

OC

TJ

-65

OC to +200 OC

TSTG

-65

OC to +150 OC

θθ

JC

1.05

OC/W

PACKAGE STYLE .380 STUD

ORDER CODE: ASI10607

MINIMUM

inches / mm

.004 / 0.10

.370 / 9.40

.320 / 8.13

B

C

D

E

F

G

A

MAXIMUM

.385 / 9.78

.330 / 8.38

.130 / 3.30

.007 / 0.18

inches / mm

H

.090 / 2.29

.100 / 2.54

DIM

.220 / 5.59

.230 / 5.84

.490 / 12.45

.450 / 11.43

I

J

.155 / 3.94

.175 / 4.45

.750 / 19.05

.980 / 24.89

.100 / 2.54

E

F

D

ØC

B

.112x45°

G

H

J

I

A

#8-32 UNC-2A

E

C

B

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