TTP-C2NF Communication Controller – Data Sheet

AS8202NF

Rev. 1.7, Copyright 2000-2007, austriamicrosystems AG and TTChip Entwicklungsgesellschaft mbH. All rights reserved.

7

Pin

Name

Dir

Function

8

RXER0

TTP Bus Channel 0: Receive Error (MII mode)

9

RXCLK0

TTP Bus Channel 0: Receive Clock (MII mode)

10

RXDV0

TTP Bus Channel 0: Receive Data Valid (MII mode)

14

TXD1

TTP Bus Channel 1: Transmit Data

15

CTS1

TTP Bus Channel 1: Transmit Enable

20

RXD1

TTP Bus Channel 1: Receive Data

16

TXCLK1

TTP Bus Channel 1: Transmit Clock (MII mode)

17

RXER1

TTP Bus Channel 1: Receive Error (MII mode)

18

RXCLK1

TTP Bus Channel 1: Receive Clock (MII mode)

19

RXDV1

TTP Bus Channel 1: Receive Data Valid (MII mode)

35-39, 42-48

A[11:0]

I

51-58, 62-69

D[15:0]

I/O

Host Interface (CNI) Data Bus, tristate

76

CEB

Host Interface (CNI) Chip Enable, active low

77

OEB

Host interface (CNI) output enable, active low

78

WEB

Host interface (CNI) write enable, active low

79

READYB

28

INTB

Host interface (CNI) time signal (interrupt), active low, open drain

31-33

LED[2:0]

Configurable generic output port

1, 27, 40

nc

Not connected, leave open

Note 1: The device is addressed at 16-bit data word boundaries. If the device is connected to a CPU with a byte-granular address bus, remember that

A[11:0] of the AS8202NF device has to be connected to A[12:1] of the CPU (considering a little endian CPU address bus).

Note 2: At de-assertion READYB is driven to the inactive value (high) for a configurable time.

5.1. Pin Directions

Dir

Function

I

TTL Input

TTL Input with Internal Weak Pull-Up

TTL Input with Internal Weak Pull-Down

I/O

TTL Input/Output with Tristate

TTL Output with Internal Weak Pull-Up at Tristate

TTL Output with Internal Weak Pull-Down at Tristate

A

Analog CMOS Pin

P

Power Pin

6 . E l e c t r i c a l Sp e c i f i c a t i o n s

6.1. Absolute Maximum Ratings (Non Operating)

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

DC Supply Voltage

VDD

-0.3

5.0

V

Input Voltage

Vin

any pin

-0.3

VDD+0.3

V

Input Current

Iin

any pin, TA=25°C

-100

100

mA

Storage Temperature

Tstrg

-55

150

°C

Soldering Temperature

Tsold

t=10 sec, Reflow and Wave

235

°C

Humidity

H

5

85

%

Electrostatic Discharge

ESD

HBM: 1KV Mil.std.883, Method 3015.7

1000

V

Note:

Stresses higher than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only,

and functional operation of the device under these or any other conditions higher than those indicated in the operational sections of this

specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability (e.g. hot carrier

degradation).

6.2. Recommended Operating Conditions

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

VDD

VSS=0V

3.0

3.3

3.6

V