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IRFHM830DPBF Scheda tecnica(PDF) 4 Page - International Rectifier |
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IRFHM830DPBF Scheda tecnica(HTML) 4 Page - International Rectifier |
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4 / 8 page ![]() 4 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 16, 2013 IRFHM830DPbF Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) Fig 8. Maximum Safe Operating Area Fig 9. Maximum Drain Current Vs. Case (Bottom) Temperature Fig 7. Typical Source-Drain Diode Forward Voltage Fig 10. Threshold Voltage Vs. Temperature 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) 1.0 10 100 1000 TJ = 25°C TJ = 150°C VGS = 0V 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) 0.001 0.01 0.1 1 10 0.20 0.10 D = 0.50 0.02 0.01 0.05 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.10 1 10 100 VDS, Drain-to-Source Voltage (V) 0.1 1 10 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) Tc = 25°C Tj = 150°C Single Pulse 100μsec 1msec 10msec -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C ) 0.5 1.0 1.5 2.0 2.5 3.0 ID = 1.0A ID = 10mA ID = 5.0mA ID = 2.0mA ID = 1.0mA 25 50 75 100 125 150 TC , Case Temperature (°C) 0 25 50 75 Limited By Package |
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