MX25L6435E datasheet(4/89 Pages) MCNIX

4 / 89 page

MX25L6435E

P/N: PM1784

REV. 1.4, NOV. 05, 2013

64M-BIT [x 1/x 2/x 4] CMOS MXSMIO® (SERIAL MULTI I/O) FLASH MEMORY

1. FEATURES

GENERAL

• Serial Peripheral Interface compatible -- Mode 0 and Mode 3

• 67,108,864 x 1 bit structure or 33,554,432 x 2 bits (two I/O mode) structure or 16,777,216 x 4 bits (four I/O

mode) structure

• 2048 Equal Sectors with 4K bytes each

- Any Sector can be erased individually

• 256 Equal Blocks with 32K bytes each

- Any Block can be erased individually

• 128 Equal Blocks with 64K bytes each

- Any Block can be erased individually

• Power Supply Operation

- 2.7 to 3.6 volt for read, erase, and program operations

• Latch-up protected to 100mA from -1V to Vcc +1V

PERFORMANCE

• High Performance

VCC = 2.7~3.6V

- Normal read

- 50MHz

- Fast read

- 1 I/O: 104MHz with 8 dummy cycles

- 2 I/O: 86MHz with 4 dummy cycles for 2READ instruction

- 4 I/O: Up to 104MHz

- Configurable dummy cycle number for 4 I/O read operation

- Fast program time: 0.7ms(typ.) and 3ms(max.)/page (256-byte per page)

- Byte program time: 12us (typical)

- Continuous Program mode (automatically increase address under word program mode)

- Fast erase time: 30ms (typ.)/sector (4K-byte per sector) ; 0.25s(typ.) /block (64K-byte per block); 20s(typ.) /

chip

• Low Power Consumption

- Low active read current: 19mA(max.) at 104MHz, 10mA(max.) at 33MHz

- Low active programming current: 15mA (typ.)

- Low active sector erase current: 10mA (typ.)

- Low standby current: 15uA (typ.)

- Deep power down current: 1uA (typ.)

• Typical 100,000 erase/program cycles

• 20 years data retention

MX25L6435E Scheda tecnica(PDF) 4 Page - Macronix International