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CMPT5087 Scheda tecnica(PDF) 1 Page - Central Semiconductor Corp

Il numero della parte CMPT5087
Spiegazioni elettronici  PNP SILICON TRANSISTOR
PDF  2 Pages
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Produttore elettronici  CENTRAL [Central Semiconductor Corp]
Homepage  http://www.centralsemi.com
Logo CENTRAL - Central Semiconductor Corp

CMPT5087 Scheda tecnica(HTML) 1 Page - Central Semiconductor Corp

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Central
Central
Central
Central
Central
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
TM
178
SOT-23 CASE
CMPT5086
CMPT5087
PNP SILICON TRANSISTOR
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMPT5086, CMPT5087 types are PNP silicon
transistors manufactured by the epitaxial
planar process, epoxy molded in a surface
mount package, designed for applications
requiring high gain and low noise.
Marking Codes are C2P and C2Q
Respectively.
MAXIMUM RATINGS (TA=25
oC)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
3.0
V
Collector Current
IC
50
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
oC
Thermal Resistance
ΘJA
357
oC/W
ELECTRICAL CHARACTERISTICS (TA=25
oC unless otherwise noted)
CMPT5086
CMPT5087
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX
UNITS
ICBO
VCB=10V
10
10
nA
ICBO
VCB=35V
50
50
nA
BVCBO
IC=100µA
50
50
V
BVCEO
IC=1.0mA
50
50
V
BVEBO
IE=100µA
3.0
3.0
V
VCE(SAT)
IC=10mA, IB=1.0mA
0.30
0.30
V
VBE(SAT)
IC=10mA, IB=1.0mA
0.85
0.85
V
hFE
VCE=5.0V, IC=0.1mA
150
500
250
800
hFE
VCE=5.0V, IC=1.0mA
150
250
hFE
VCE=5.0V, IC=10mA
150
250
fT
VCE=5.0V, IC=500µA, f=20MHz
40
40
MHz
Cob
VCB=5.0V, IE=0, f=1.0MHz
4.0
4.0
pF
hfe
VCE=5.0V, IC=1.0mA, f=1.0kHz
150
600
250
900


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