MAXIMUM RATINGS: (TA=25°C unless otherwise noted)

SYMBOL

UNITS

Continuous Reverse Voltage

VR

240

V

Peak Repetitive Reverse Voltage

VRRM

300

V

Peak Repetitive Reverse Current

IO

200

mA

Continuous Forward Current

IF

225

mA

Peak Repetitive Forward Current

IFRM

625

mA

Forward Surge Current, tp=1

µsIFSM

4000

mA

Forward Surge Current, tp=1 s

IFSM

1000

mA

Power Dissipation

PD

350

mW

Operating and Storage

Junction Temperature

TJ,Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

IR

VR=240V

100

nA

IR

VR=240V, TA=150°C

100

µA

BVR

IR=100µA

300

V

VF

IF=100mA

1.0

V

CT

VR=0, f=1 MHz

5.0

pF

trr

IF=IR=30mA, Rec. To 3.0mA, RL=100Ω

50

ns

CMXD2004TO

TRIPLE ISOLATED OPPOSING

SURFACE MOUNT

HIGH VOLTAGE SWITCHING DIODE

SOT 26 CASE

Central

Semiconductor Corp.

TM

R0 ( 29-November 2001)

DESCRIPTION:

The CENTRAL SEMICONDUCTOR

CMXD2004TO consists of three (3) Isolated

High Voltage Silicon Switching Diodes arranged

in an alternating configuration in a SUPERmini

SOT-26 surface mount package, designed for

high voltage switching applications. This device

can be configured as a 900V switching diode.

See optional mounting pad configuration.

Marking code is X04TO.