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CQ89D Scheda tecnica(PDF) 1 Page - Central Semiconductor Corp |
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CQ89D Scheda tecnica(HTML) 1 Page - Central Semiconductor Corp |
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1 / 2 page ![]() Central Central Central Central Central Semiconductor Corp. Semiconductor Corp. Semiconductor Corp. Semiconductor Corp. Semiconductor Corp. TM 252 CQ89D CQ89M CQ89N 2.0 AMP TRIAC 400 THRU 800 VOLTS SOT-89 CASE MAXIMUM RATINGS (TC=25 oC) SYMBOL CQ89D CQ89M CQ89N UNITS Peak Repetitive Off-State Voltage VDRM 400 600 800 V RMS On-State Current (TC=80 oC) IT(RMS) 2.0 A Peak One Cycle Surge (10ms) ITSM 10 A Peak Gate Current IGM 1.0 A Average Gate Power Dissipation PG(AV) 0.1 W StorageTemperature Tstg -45 to +150 oC Junction Temperature TJ -45 to +125 oC Thermal Resistance ΘJ-C 10 oC/W ELECTRICAL CHARACTERISTICS (TC=25 oC unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IDRM VD=Rated VDRM 5.00 µA IDRM VD=Rated VDRM, TC=125 oC 200 µA IGT VD=12V, QUAD I, II, III, IV 25 mA IH VD=12V 25 mA VGT VD=12V 2.00 V VTM IT=3.0A 1.75 V dv/dt VD=2 3 VDRM, TC=125 oC 100 V/ µs SOT-89 DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ89D series types are epoxy molded silicon triacs designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. |
Codice articolo simile - CQ89D |
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Descrizione simile - CQ89D |
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