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Motorola Bipolar Power Transistor Device Data

High Voltage NPN Silicon

Power Transistors

. . . designed for line operated audio output amplifier, Switchmode power supply

drivers and other switching applications.

• 250 V to 400 V (Min) — VCEO(sus)

• 1 A Rated Collector Current

• Popular TO–220 Plastic Package

MAXIMUM RATINGS

Rating

Symbol

TIP47

TIP48

TIP49

TIP50

Unit

Collector–Emitter Voltage

VCEO

250

300

350

400

Vdc

Collector–Base Voltage

VCB

350

400

450

500

Vdc

Emitter–Base Voltage

VEB

5.0

Vdc

Collector Current — Continuous

Peak

IC

1.0

2.0

Adc

Base Current

IB

0.6

Adc

Total Power Dissipation

@ TC = 25_C

Derate above 25

_C

PD

40

0.32

Watts

W/

_C

Total Power Dissipation

@ TA = 25_C

Derate above 25

_C

PD

2.0

0.016

Watts

W/

_C

Unclamped Inducting Load

Energy (See Figure 8)

E

20

mJ

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 65 to + 150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

3.125

_C/W

Thermal Resistance, Junction to Ambient

R

θJA

62.5

_C/W

Figure 1. Power Derating

TC, CASE TEMPERATURE (°C)

0

100

0

10

160

20

30

60

80

40

140

40

20

120

TC

TC

0

1

2

3

4

TA

TA

Preferred devices are Motorola recommended choices for future use and best overall value.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by TIP47/D

TIP47

TIP49

TIP48

TIP50

1.0 AMPERE

POWER TRANSISTORS

NPN SILICON

250 – 300 – 350 – 400 VOLTS

40 WATTS

*Motorola Preferred Device

*

*

*

*

CASE 221A–06

TO–220AB

REV 1