HAT2240C datasheet(2/7 Pages) RENESAS

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HAT2240C

R07DS1184EJ0500 Rev.5.00

Page 2 of 6

Mar 19, 2014

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

V(BR)DSS

—

ID = 10 mA, VGS = 0

Gate to source breakdown voltage

V(BR)GSS

±12

IG =

±100 μA, VDS = 0

Gate to source leak current

IGSS

—

±10

μA

VGS =

±10 V, VDS = 0

Drain to source leak current

IDSS

—

μA

VDS = 60 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

0.4

—

1.4

VDS = 10 V, ID = 1 mA

Drain to source on state resistance

RDS(on)

—

ID = 1.3 A, VGS = 4.5 V

Note3

RDS(on)

—

119

ID = 1.3 A, VGS = 2.5 V

Note3

Forward transfer admittance

| yfs |

3.3

—

ID = 1.3 A, VDS = 10 V

Note3

Input capacitance

Ciss

—

590

—

VDS = 10 V, VGS = 0,

f = 1 MHz

Output capacitance

Coss

—

Reverse transfer capacitance

Crss

—

Total gate charge

—

VDD = 10 V, VGS = 4.5 V

ID = 2.5 A

Gate to source charge

Qgs

—

1.2

—

Gate to drain charge

Qgd

—

1.4

—

Turn - on delay time

td(on)

—

ID = 1.3 A

VGS = 4.5 V, VDD = 10 V

RL = 7.7

Ω, Rg = 4.7 Ω

Rise time

—

Turn - off delay time

td(off)

—

Fall time

—

Body - drain diode forward voltage

VDF

—

0.8

1.1

IF = 2.5 A, VGS = 0

Note3

Notes: 3. Pulse test

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