| Motore di ricerca datesheet componenti elettronici |
|
2SD1782G-R-AE3-R Scheda tecnica(PDF) 1 Page - Unisonic Technologies |
|
|
|||||||||||||||||||||||||||||
2SD1782G-R-AE3-R Scheda tecnica(HTML) 1 Page - Unisonic Technologies |
|
1 / 3 page ![]() UNISONIC TECHNOLOGIES CO., LTD 2SD1782 Preliminary NPN EPITAXIAL SILICON TRANSISTOR www.unisonic.com.tw 1 of 3 Copyright © 2013 Unisonic Technologies Co., Ltd QW-R206-107.a POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1782 is an NPN silicon transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, low collector-emitter saturation voltage and high DC current gain, etc. FEATURES * High collector-emitter breakdown voltage * Low collector-emitter saturation voltage * High DC current gain ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 2SD1782L-x-AE3-R 2SD1782G-x-AE3-R SOT-23 E B C Tape Reel MARKING (For SOT-23 Package) D17 L: Lead Free G: Halogen Free |
Codice articolo simile - 2SD1782G-R-AE3-R |
|
Descrizione simile - 2SD1782G-R-AE3-R |
|
|
|
Link URL |
| Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | Collegamento alla scheda tecnica | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |