UNISONIC TECHNOLOGIES CO., LTD

BD237

NPN EPITAXIAL SILICON TRANSISTOR

www.unisonic.com.tw

2 of 3

Copyright © 2013 Unisonic Technologies Co., Ltd

QW-R226-001, B



°C, unless otherwise noted)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

100

V

Collector-Emitter Voltage

80

V

Emitter-Base Voltage

5

V

Continuous Collector Current

2

A

Collector Dissipation

1.25

W

Junction Temperature

150

°C

Storage Temperature Range

-65~150

°C

Note: Absolute maximum ratings are stress ratings only and functional device operation is not implied. Absolute

maximum ratings are those values beyond which the device could be permanently damaged.



°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector-Base Breakdown Voltage

100

V

Collector-Emitter Breakdown Voltage

80

V

Emitter-Base Breakdown Voltage

5

V

Collector Cut-Off Current

100

µA

Emitter Cut-Off Current

1

mA

Collector-Emitter Saturation Voltage

0.6

V

DC Current Gain

40

25

Transition Frequency

3

MHz