K4059G-B-AQ3-R datasheet(2/3 Pages) UTC

2 / 3 page

K4059

Preliminary

N-CHANNEL JFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R228-001.a



ABSOLUTE MAXIMUM RATINGS (TA=25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Gate-Drain Voltage

VGDO

-20

Gate-Current

Drain Power Dissipation (TA=25°C)

100

Junction Temperature

125

°C

Storage Temperature Range

TSTG

-55~125

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (TA =25°C)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Drain Current

IDSS

VGS=0, VDS=2V

K4059-A

140

240

µA

K4059-B

210

350

µA

K4059-C

320

500

µA

Drain Current

VDD=2V, RL=2.2kΩ,

Cg=5pF

K4059-A

125

260

µA

K4059-B

190

370

µA

K4059-C

290

500

µA

Gate-Drain Voltage

V(BR)GDO

IG=-10µA

-20

Gate-Source Cut-Off Voltage

VGS (OFF)

VDS=2V, ID=1µA

-0.1

-1.0

Forward Transfer Admittance

|Yfs|

VDS=2V, VGS=0V

1.35 1.85

Input Capacitance

CISS

VDS=2V, VGS=0, f=1MHz

4.0

Voltage Gain

VDD=2V,RL=2.2kΩ,

Cg=5pF, f=1kHz,

VIN=100mV

K4059-A

-1.2

+0.9

K4059-B

-0.2

+1.4

K4059-C

+0.5 +1.8

Delta Voltage Gain

∆GV(f)

VDD=2V, RL=2.2kΩ, Cg=5pF,

f=1kHz~100Hz, VIN=100mV

-1

Delta Voltage Gain

∆GV(V)

VDD=2V~1.5V,RL=2.2kΩ,

Cg=5pF, f=1kHz,

VIN=100mV

K4059-A

-0.6 -1.1

K4059-B

-0.8 -1.7

K4059-C

-1.4 -3.2

Noise Voltage

VDD=2V, RL=1kΩ,

Cg=10pF, GV=80dB,

A-Curve Filter

K4059-A

K4059-B

K4059-C

Total Harmonic Distortion

THD

VDD=2V, RL=2.2kΩ,

Cg=5pF, f=1kHz,

VIN =50mV

K4059-A

1.3

K4059-B

0.6

K4059-C

0.1

Time Output Stability

tOS

VDD=2V, RL=2.2kΩ, Cg=5pF

100 200



CLASSIFICATION OF IDSS

RANK

RANGE

140-240

210-350

320-500

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