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UFP264 Scheda tecnica(PDF) 2 Page - Unisonic Technologies

Il numero della parte UFP264
Spiegazioni elettronici  38A, 250V N-CHANNEL POWER MOSFET
PDF  3 Pages
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Produttore elettronici  UTC [Unisonic Technologies]
Homepage  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UFP264 Scheda tecnica(HTML) 2 Page - Unisonic Technologies

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UFP264
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-813.B
ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified)(Note 1)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (VGS=0)
VDSS
250
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous
ID
38
A
Pulsed (Note 1)
IDM
152
A
Avalanche Energy
EAS
1000
mJ
EAR
28
mJ
Power Dissipation
PD
280
W
Derate above 25°C
2.2
mW/°C
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by safe operating area
3. VDD=50V, L=1.1mH, RG=25Ω, IAS=38A
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
40
°C/W
Junction to Case
θJC
0.45
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
250
V
Drain-Source Leakage Current
IDSS
VDS=250V, VGS=0V
25
µA
Gate-Source Leakage Current
Forward
IGSS
VGS=+20V, VDS=0V
+100
nA
Reverse
VGS=-20V, VDS=0V
-100
nA
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
2
3
4
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=23A
75
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
3900
pF
Output Capacitance
COSS
950
pF
Reverse Transfer Capacitance
CRSS
250
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDD=40V, ID=38A
130
170
nC
Gate to Source Charge
QGS
26
nC
Gate to Drain Charge
QGD
55
nC
Turn-ON Delay Time
tD(ON)
VDD=30V, ID=1A, RG=4.7Ω,
VGS=10V
30
ns
Rise Time
tR
180
ns
Fall-Time
tF
35
ns
Off-Voltage Rise Time
tR(OFF)
135
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
(Note 1)
38
A
Maximum Body-Diode Pulsed Current
ISM
152
A
Drain-Source Diode Forward Voltage
VSD
ISD=38A, VGS=0V (Note 2)
1.8
V
Notes: 1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration=300µs, Duty cycle ≤2%



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