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UTT6NP10L-S08-R Scheda tecnica(PDF) 4 Page - Unisonic Technologies

Il numero della parte UTT6NP10L-S08-R
Spiegazioni elettronici  DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL)
PDF  7 Pages
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Produttore elettronici  UTC [Unisonic Technologies]
Homepage  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UTT6NP10L-S08-R Scheda tecnica(HTML) 4 Page - Unisonic Technologies

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UTT6NP10
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
4 of 7
www.unisonic.com.tw
QW-R502-772.D
ELECTRICAL CHARACTERISTICS(Cont.)
P-Channel
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=-250µA, VGS=0V
-100
V
Drain-Source Leakage Current
IDSS
VDS=-80V, VGS=0V
-10
µA
Gate-Source Leakage Current
Forward
IGSS
VGS=+20V, VGS=0V
+100 nA
Reverse
VGS=-20V, VGS=0V
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250µA
-1
-3
V
Static Drain-Source On-State Resistance
(Note 2)
RDS(ON)
VGS=-10V, ID=-2A
155 mΩ
VGS=-5V, ID=-1A
250 mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=-25V, f=1.0MHz
1400 2240 pF
Output Capacitance
COSS
110
pF
Reverse Transfer Capacitance
CRSS
70
pF
SWITCHING PARAMETERS
Total Gate Charge (Note 2)
QG
VGS=-10V, VDS=-80V, ID=-3.2A
29
46
nC
Gate to Source Charge
QGS
3
nC
Gate to Drain Charge
QGD
9
nC
Turn-ON Delay Time (Note 2)
tD(ON)
VDS=-50V, ID=--3.2A
VGS=-10V, RG=3.3Ω
9
ns
Rise Time
tR
6
ns
Turn-OFF Delay Time
tD(OFF)
49
ns
Fall-Time
tF
22
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note 2)
VSD
IS=-3.2A, VGS=0V
-1.3
V
Notes: 1. Pulse Test: Pulse width limited by Max. junction temperature.
2. N-CH, P-
≦
CH are same, mounted on 2oz FR4 board t 10s.



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