B40C800DM, B80C800DM, B125C800DM, B250C800DM, B380C800DM

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Vishay General Semiconductor

Revision: 16-Aug-13

3

Document Number: 88533

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 5 - Typical Reverse Leakage Characteristics Per Diode

Fig. 6 - Typical Junction Capacitance Per Diode

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

0

20

40

60

80

100

0.01

0.1

1

10

Percent of Rated Peak Reverse Voltage (%)

T

T

1

10

100

1

10

100

T

f = 1.0 MHz

V

Reverse Voltage (V)

Case Style DFM

0.255 (6.5)

0.245 (6.2)

0.315 (8.00)

0.285 (7.24)

0.013 (0.33)

0.0086 (0.22)

0.350 (8.9)

0.300 (7.6)

0.075 (1.90)

0.055 (1.39)

0.205 (5.2)

0.195 (5.0)

0.080 (2.03)

0.050 (1.27)

0.185 (4.69)

0.150 (3.81)

0.335 (8.51)

0.320 (8.12)

0.130 (3.30)

0.120 (3.05)

0.045 (1.14)

0.035 (0.89)

0.023 (0.58)

0.018 (0.46)