IXTA7N60PM

IXTP7N60PM

IXYS reserves the right to change limits, test conditions, and dimensions.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

4

7

S

C

iss

1180

pF

C

oss

V

110

pF

C

rss

11

pF

t

d(on)

Resistive Swithcing Times

20

ns

t

r

V

V

27

ns

t

d(off)

R

65

ns

t

f

26

ns

Q

g(on)

20

nC

Q

gs

V

V

7

nC

Q

gd

7

nC

R

thJC

3.0

°C/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

Min.

Typ.

Max.

I

S

V

7

A

I

SM

Repetitive, pulse width limited by T

JM

28

A

V

SD

I

1.5

V

t

rr

500

ns

Notes:1. Pulse test, t

≤ 300 μs; duty cycle, d ≤ 2 %.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or moreof the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Terminals: 1 - Gate

2 - Drain (Collector)

3 - Source (Emitter)

12

3

ISOLATED TO-220 (I

XTP...M)

I

V

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.