IXTF03N400 datasheet(1/4 Pages) IXYS

Il numero della parte	IXTF03N400

Spiegazioni elettronici	High Voltage Power MOSFET

PDF	4 Pages

Scroll/Zoom	100%

Produttore elettronici	IXYS [IXYS Corporation]

Homepage	http://www.ixys.com

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1 / 4 page

DS100117A(11/09)

High Voltage

Power MOSFET

( Electrically Isolated Tab)

N-Channel Enhancement Mode

Features

Silicon Chip on Direct-Copper Bond

(DCB) Substrate

Isolated Mounting Surface

4000V Electrical Isolation

Molding Epoxies meet UL 94 V-0

Flammability Classification

Advantages

Easy to Mount

Space Savings

High Power Density

Applications

High Voltage Power Supplies

Capacitor Discharge

Pulse Circuits

IXTF03N400

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

4000

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

4000

V

GSS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C

300

mA

I

DM

T

C = 25°C, Pulse Width Limited by TJM

800

mA

P

D

T

C = 25°C70

W

T

J

- 55 ... +150

°C

T

JM

150

°C

T

stg

- 55 ... +150

°C

T

L

1.6mm (0.062 in.) from case for 10s

300

°C

T

SOLD

Plastic Body for 10s

260

°C

F

C

Mounting Force

20..120 / 4.5..27

N/lb.

V

ISOL

50/60Hz, 1 Minute

4000

V~

Weight

5

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250μA

4000

V

GS(th)

V

DS = VGS, ID = 250μA

2.0

4.0

V

I

GSS

V

GS = ±20V, VDS = 0V

±100 nA

I

DSS

V

DS = VDSS, VGS= 0V

10

μA

Note 2, T

J = 125°C

750 μA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

300

Ω

V

DSS

= 4000V

I

D25

= 300mA

R

DS(on)

≤≤≤≤≤ 300

Ω

Advance Technical Information

1 = Gate

5 = Drain

2 = Source

ISOPLUS i4-PakTM

Isolated Tab

1

5

2

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