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SGA6589Z Scheda tecnica(PDF) 2 Page - RF Micro Devices

Il numero della parte SGA6589Z
Spiegazioni elettronici  DC to 3500MHz, CASCADABLE LOW NOISE, HIGH GAIN SiGe HBT
PDF  6 Pages
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Produttore elettronici  RFMD [RF Micro Devices]
Homepage  http://www.rfmd.com
Logo RFMD - RF Micro Devices

SGA6589Z Scheda tecnica(HTML) 2 Page - RF Micro Devices

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DS111014
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SGA6589Z
Typical Performance at Key Operating Frequencies
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Current (ID)160
mA
Max Device Voltage (VD)7
V
Max RF Input Power
+16
dBm
Max Junction Temp (TJ)+150
°C
Operating Temp Range (TL)
-40 to +85
°C
Max Storage Temp
+150
°C
Moisture Sensitivity Level
MSL 2
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l
Parameter
Unit
100
MHz
500
MHz
850
MHz
1950
MHz
2400
MHz
3500
MHz
Small Signal Gain
dB
28.4
27.1
25.2
19.8
18.2
15.1
Output Third Order Intercept Point
dBm
32.1
32.5
32.0
30.3
Output Power at 1dB Compression
dBm
21.6
21.5
19.0
17.8
Input Return Loss
dB
13.9
15.0
15.6
13.1
12.4
11.4
Output Return Loss
dB
16.1
13.5
11.4
9.2
9.4
10.6
Reverse Isolation
dB
30.3
29.8
28.7
24.3
23.1
19.2
Noise Figure
dB
2.5
2.5
2.9
3.3
Test Conditions: VS=8V, ID=80mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, RBIAS=39, TL=25°C, ZS=ZL=50
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
OIP
3 vs. Frequency
V
D= 4.9 V, ID= 80 mA
P
1dB vs. Frequency
V
D= 4.9 V, ID= 80 mA
20
25
30
35
40
00.5
11.5
22.5
3
Frequency (GHz)
14
16
18
20
22
24
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
T
L=+25ºC
T
L=+25ºC
Noise Figure vs. Frequency
V
D=4.9 V, ID= 80 mA
0
1
2
3
4
5
0
0.511.5
22.5
3
Frequency (GHz)
T
L=+25ºC



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