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DF68541 Scheda tecnica(PDF) 2 Page - Dynex Semiconductor

Il numero della parte DF68541
Spiegazioni elettronici  Fast Recovery Diode
PDF  8 Pages
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Produttore elettronici  DYNEX [Dynex Semiconductor]
Homepage  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

DF68541 Scheda tecnica(HTML) 2 Page - Dynex Semiconductor

  DF68541 Datasheet HTML 1Page - Dynex Semiconductor DF68541 Datasheet HTML 2Page - Dynex Semiconductor DF68541 Datasheet HTML 3Page - Dynex Semiconductor DF68541 Datasheet HTML 4Page - Dynex Semiconductor DF68541 Datasheet HTML 5Page - Dynex Semiconductor DF68541 Datasheet HTML 6Page - Dynex Semiconductor DF68541 Datasheet HTML 7Page - Dynex Semiconductor DF68541 Datasheet HTML 8Page - Dynex Semiconductor  
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DF685
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SURGE RATINGS
Conditions
Max.
Units
4.5
kA
101.25x103
A
2s
I
2t for fusing
I
2t
Surge (non-repetitive) forward current
I
FSM
Parameter
Symbol
10ms half sine; with 0% V
RRM, Tj = 150
oC
3.6
kA
64.8x103
A
2s
I
2t for fusing
I
2t
Surge (non-repetitive) forward current
I
FSM
10ms half sine; with 50% V
RRM, Tj = 150
oC
-kA
-A
2s
I
2t for fusing
I
2t
Surge (non-repetitive) forward current
I
FSM
10ms half sine; with 100% V
RRM, Tj = 150
oC
THERMAL AND MECHANICAL DATA
dc
Conditions
Max.
Units
oC/W
-
0.086
Anode dc
Clamping force 10kN
with mounting compound
Thermal resistance - case to heatsink
R
th(c-h)
0.01
Double side
-
Single side
Thermal resistance - junction to case
R
th(j-c)
Single side cooled
Symbol
Parameter
-
0.02
oC/W
oC/W
Cathode dc
-
0.095
oC/W
Double side cooled
-
0.045
oC/W
T
stg
Storage temperature range
-55
150
oC
kN
11.0
9.0
Clamping force
-
T
vj
Virtual junction temperature
On-state (conducting)
-
150
oC
Min.
t
rr
80
Symbol
Typ.
Units
Parameter
V
FM
Forward voltage
I
RRM
Peak reverse current
Reverse recovery time
Q
RA1
Recovered charge (50% chord)
I
RM
Reverse recovery current
K
Soft factor
V
TO
Threshold voltage
r
T
Slope resistance
V
FRM
Forward recovery voltage
di/dt = 1000A/
µs, T
j = 125
oC
-
220
V
At T
vj = 150
oC
-
1.76
m
Ω
At T
vj = 150
oC
-
2.0
V
1.8
-
-
270
-
A
-
650
µC
5-
µs
At V
RRM, Tcase = 150
oC-
mA
At 1500A peak, T
case = 25
oC
-
4.8
V
Conditions
Max.
I
F = 1000A, diRR/dt = 100A/µs
T
case = 150
oC, V
R = 100V
CHARACTERISTICS



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