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DS2002SF Scheda tecnica(PDF) 4 Page - Dynex Semiconductor |
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DS2002SF Scheda tecnica(HTML) 4 Page - Dynex Semiconductor |
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4 / 7 page ![]() 4/7 www.dynexsemi.com DS2002SF CHARACTERISTICS Forward voltage Peak reverse current Parameter µC 1500 At T vj = 175˚C - Q S Total stored charge Symbol V FM I RRM I RR Peak recovery current V TO Threshold voltage r T Slope resistance 0.088 m Ω At T vj = 175˚C - 0.74 V -90 A - At V RRM, Tcase = 175 oC- 50 mA - 1.18 V At 3400A peak, T case = 25 oC Conditions Min. Max. Units I F = 2000A, dIRR/dt = 3A/µs T case = 175˚C, VR = 100V CURVES Fig.2 Maximum (limit) forward characteristics Fig.3 Dissipation curves V FM Equation:- V FM = A + Bln (I F ) + C.I F +D. √I F Where A = –0.64773 B = 0.268581 C = 0.00016 D = –0.01796 these values are valid for T j = 125˚C for I F 500A to 8000A 0.5 1.0 1.5 2.0 Instantaneous forward voltage, VF - (V) 0 2000 4000 6000 8000 Measured under pulse conditions Tj = 25˚C Tj = 175˚C 0 1000 2000 3000 4000 Mean forward current, IF(AV) - (A) 0 1000 2000 3000 4000 5000 dc 5000 6000 Half wave 3 phase 6 phase |
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