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DS402ST09 Scheda tecnica(PDF) 2 Page - Dynex Semiconductor |
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DS402ST09 Scheda tecnica(HTML) 2 Page - Dynex Semiconductor |
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2 / 7 page ![]() DS402ST 2/7 SURGE RATINGS Conditions 10ms half sine; T case = 175 oC V R = 50% VRRM - 1/4 sine 10ms half sine; T case = 175 oC V R = 0 Max. Units Symbol Parameter I FSM Surge (non-repetitive) forward current I 2tI2t for fusing I FSM Surge (non-repetitive) forward current I 2t I 2t for fusing A 2s 5.6 kA 101 x 103 A2s 4.5 kA THERMAL AND MECHANICAL DATA dc Conditions Min. Max. Units oC/W - 0.16 Anode dc Clamping force 4.5kN with mounting compound Thermal resistance - case to heatsink R th(c-h) 0.02 Double side - 175 oC T vj Virtual junction temperature T stg Storage temperature range Reverse (blocking) Single side - Thermal resistance - junction to case R th(j-c) Single side cooled Symbol Parameter Clamping force 3.5 5.0 kN -55 200 oC - On-state (conducting) - 185 oC - 0.04 oC/W oC/W Cathode dc - 0.16 oC/W Double side cooled - 0.08 oC/W CHARACTERISTICS Forward voltage Peak reverse current Parameter Symbol V FM I RRM At V RRM, Tcase = 175 oC- 15 mA - 1.25 V At 450A peak, T case = 25 oC Conditions Min. Max. Units 155 x 10 3 At T vj = 175˚C - V TO Threshold voltage r T Slope resistance 0.84 m Ω At T vj = 175˚C - 0.81 V |
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