2SC5338 datasheet(2/10 Pages) NEC

Il numero della parte	2SC5338

Spiegazioni elettronici	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

PDF	10 Pages

Scroll/Zoom	100%

Produttore elettronici	NEC [NEC]

Homepage	http://www.nec.com/

Logo

2 / 10 page

2SC5338

ELECTRICAL CHARACTERISTICS (TA = 25 °

°°°C)

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

Collector Cutoff Current

ICBO

VCB = 20 V, IE = 0

1.5

µA

Emitter Cutoff Current

IEBO

VEB = 2 V, IC = 0

1.5

µA

DC Current Gain

hFE

VCE = 5 V, IC = 50 mA

Note2

250

Gain Bandwidth Product

VCE = 5 V, IC = 50 mA

6.0

GHz

Feed-back Capacitance

Cre

VCB = 5 V, IE = 0, f = 1 MHz

Note3

1.0

2.0

Insertion Power Gain

|S21e|

VCE = 5 V, IC = 50 mA, f = 1 GHz

8.5

Nose Figure

VCE = 5 V, IC = 50 mA, f = 1 GHz

3.5

IM2

VCE = 5 V

− 55

VCE = 10 V

− 63

IM3

VCE = 5 V

− 76

VCE = 10 V

− 83

Notes 2. Pulse measurement: PW

≤ 350

µS, Duty Cycle ≤ 2 %

3. Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal.

hFE Classification

Rank

Marking

hFE

50 to 100

80 to 160

125 to 250

3rd Order

Intermoduration

Distortion

2nd Order

Intermoduration

Distortion

IC = 50 mA

Vin = 105 dB

µV/75 Ω

f = 190 MHz

− 90 MHz

IC = 50 mA

Vin = 105 dB

µV/75 Ω

f = 2

× 190 MHz − 200 MHz

2SC5338 Scheda tecnica(PDF) 2 Page - NEC

2SC5338 Scheda tecnica(HTML) 2 Page - NEC

Html Pages

1 2 3 4 5 6 7 8 9 10

Scheda tecnica Scarica

Link URL