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MP02/190/10 Scheda tecnica(PDF) 4 Page - Dynex Semiconductor |
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MP02/190/10 Scheda tecnica(HTML) 4 Page - Dynex Semiconductor |
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4 / 10 page ![]() MP02 XXX 190 Series 4/10 100 10 1.0 0.1 0.001 0.01 0.1 1.0 10 Gate trigger current I GT - (A) T j = 125˚C T j = 25˚C Upper limit 99% Lower limit 1% V FGM V GD I FGM 5W 10W 50W 75W 100W Pulse Width µs 20 25 100 500 1ms 10ms 50 100 100 100 100 100 10 100 100 100 100 100 50 - 400 100 100 100 25 - - Pulse Frequency Hz Table gives pulse power P GM in watts 0 1.0 2.0 3.0 4.0 Instantaneous on-state voltage V T - (V) 2500 2000 1500 1000 500 0 T j = 125˚C CURVES Fig. 1 Maximum (limit) on-state characteristics (thyristor or diode) - See Note 1 Fig. 2 Gate trigger characteristics |
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