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MP04DD810 Scheda tecnica(PDF) 3 Page - Dynex Semiconductor |
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MP04DD810 Scheda tecnica(HTML) 3 Page - Dynex Semiconductor |
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3 / 9 page ![]() 3/9 www.dynexsemi.com MP04DD810 Note 1: The data given in this datasheet with regard to forward voltage drop is the for the calculation of the power dissipation in the semiconductor elements only. Forward voltage drops measured at the power terminals will be in excess of these figures due to the impedance of the busbars from the terminals to the semiconductor. CHARACTERISTICS Peak reverse current Parameter µC 1600 At T vj = 150˚C - Q S Total stored charge I F = 1000A, dIRR/dt = 3A/µs T case = 150˚C, VR = 100V Symbol I RRM I RR Peak recovery current V TO Threshold voltage. See Note 1. r T Slope resistance. See Note 1. 0.29 m Ω At T vj = 150˚C - 0.7 V -85 A - At V RRM, Tcase = 150 oC- 50 mA Conditions Min. Max. Units |
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