SSPS7100N datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

SSPS7100N

6.2 A , 100 V, RDS(ON) 62 m

N-Ch Enhancement Mode Power MOSFET

11-Dec-2013 Rev. B

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Gate-Threshold Voltage

VGS(th)

VDS=VGS, ID=250μA

Gate-Body Leakage Current

IGSS

±10

μA

VDS=0, VGS= ±20V

VDS=80V, VGS=0

Zero Gate Voltage Drain Current

IDSS

μA

VDS=80V, VGS=0, TJ=55°C

On-State Drain Current

ID(on)

3.1

VDS=5V, VGS=10V

VGS=10V, ID=5A

Drain-Source On-Resistance

RDS(ON)

mΩ

VGS=4.5V, ID=4.9A

Forward Transconductance

gfs

VDS=15V, ID=5A

Diode Forward Voltage

VSD

0.73

IS=2.5A, VGS=0

Dynamic

Total Gate Charge

Gate-Source Charge

Qgs

4.1

Gate-Drain Charge

Qgd

6.2

VDS=50V,

VGS=4.5V,

ID=5A

Input Capacitance

Ciss

1098

Output Capacitance

Coss

120

Reverse Transfer Capacitance

Crss

VDS=15V,

VGS=0

f=1MHz

Turn-On Delay Time

Td(on)

Rise Time

Turn-Off Delay Time

Td(off)

Fall Time

VDD=50V

ID=5A

VGEN=10V

RL=10Ω

RGEN=6Ω

Notes:

Pulse test：PW ≦ 300μs duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing.

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