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SSG4530C Scheda tecnica(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSG4530C Scheda tecnica(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 6 page  SSG4530C N-Ch: 5.3A, 30V, RDS(ON) 82 mΩ Ω Ω Ω P-Ch: -5.2A, -30V, RDS(ON) 80 mΩ Ω Ω Ω N & P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 30-Jul-2012 Rev. A Page 1 of 6 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A H B M D C J K F L E N G RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space Fast switching speed High performance trench technology APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers,. printers, PCMCIA cards, cellular and cordless telephones PACKAGE INFORMATION Package MPQ Leader Size SOP-8 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit N-CH P-CH Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ±20 ±20 V Continuous Drain Current 1 TA = 25°C ID 5.3 -5.2 A TA = 70°C 4.2 -4.1 A Pulsed Drain Current 2 IDM 20 -20 A Continuous Source Current (Diode Conduction) 1 IS 1.3 -1.3 A Total Power Dissipation 1 TA = 25°C PD 2.1 W TA = 70°C 1.3 W Operating Junction & Storage Temperature Range TJ, TSTG -55 ~ 150 °C Thermal Resistance Ratings Maximum Junction-to-Ambient 1 t≦10 sec RθJA 62.5 °C / W Steady State 110 °C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 5.8 6.20 H 0.35 0.51 B 4.80 5.00 J 0.375 REF. C 3.80 4.00 K 45° D 0° 8° L 1.35 1.75 E 0.50 0.93 M 0.10 0.25 F 0.19 0.25 N 0.25 REF. G 1.27 TYP. SOP-8 Top View |
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