2SC5337 datasheet(2/6 Pages) CEL

Il numero della parte	2SC5337

Spiegazioni elettronici	NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold

PDF	6 Pages

Scroll/Zoom	100%

Produttore elettronici	CEL [California Eastern Labs]

Homepage	http://www.cel.com

Logo

2 / 6 page

2SC5337

Sep 14, 2012

ELECTRICAL CHARACTERISTICS (TA = +25°C)

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

Collector Cut-off Current

ICBO

VCB = 20 V, IE

–

Emitter Cut-off Current

IEBO

VBE = 2 V, IC

–

DC Current Gain

hFE Note 1 VCE = 10 V, IC = 50 mA

120

200

–

Insertion Power Gain

S21e 2 VCE = 10 V, IC = 50 mA, f = 1 GHz

7.0

8.3

–

)

(

Note 2

VCE = 10 V, IC = 50 mA, f = 500 MHz

–

1.5

3.5

)

(

Note 2

VCE = 10 V, IC = 50 mA, f = 1 GHz

–

2.0

3.5

2nd Order Intermoduration Distortion

IM2

VCE = 10 V, IC = 50 mA, RS = RL = 75 ,

Vin = 105 dB V/75 , f1 = 190 MHz,

f2 = 90 MHz, f = f1 − f2

–

59.0

–

3rd Order Intermoduration Distortion

IM3

VCE = 10 V, IC = 50 mA, RS = RL = 75 ,

Vin = 105 dB V/75 , f1 = 190 MHz,

f2 = 200 MHz, f = 2 × f1 − f2

–

82.0

–

Notes 1. Pulse measurement: PW ≤ 350 s, Duty Cycle ≤ 2%

2. RS = RL = 50 , tuned

hFE CLASSIFICATION

Rank

QR/YQR

QS/YQS

Marking

hFE Value

60 to 120

100 to 200

<R>

A Business Partner of Renesas Electronics Corporation.

2SC5337 Scheda tecnica(PDF) 2 Page - California Eastern Labs

2SC5337 Scheda tecnica(HTML) 2 Page - California Eastern Labs

Html Pages

1 2 3 4 5 6

Scheda tecnica Scarica

Link URL