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EL2228CS Scheda tecnica(PDF) 3 Page - Elantec Semiconductor |
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EL2228CS Scheda tecnica(HTML) 3 Page - Elantec Semiconductor |
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3 / 12 page ![]() 3 EL2228C - Preliminary Dual Low Noise Amplifier Electrical Characteristics VS+= +5V, VS - = -5V, RL = 500Ω and CL = 3pF to 0V, RF = 420Ω & TA = 25°C unless otherwise specified. Parameter Description Condition Min Typ Max Unit Input Characteristics VOS Input Offset Voltage VCM = 0V 0.6 3 mV TCVOS Average Offset Voltage Drift [1] 4.9 µV/°C IB Input Bias Current VCM = 0V -9 -4.5 -1 µA RIN Input Impedance 6 M Ω CIN Input Capacitance 1.2 pF CMIR Common-Mode Input Range -4.7 +3.4 V CMRR Common-Mode Rejection Ratio for VIN from -4.7V to +3.4V 60 90 dB for VIN from -2V to +2V dB AVOL Open-Loop Gain -2.5V ≤ VOUT ≤ 2.5V 60 72 dB en Voltage Noise f = 100kHz 4.7 nV/ √Hz in Current Noise f = 100kHz 1.2 pA/ √Hz Output Characteristics VOL Output Swing Low RL = 500Ω -3.8 -3.5 V RL = 250Ω -3.7 -3.5 V VOH Output Swing High RL = 500Ω 3.5 3.7 V RL = 250Ω 3.5 3.6 V ISC Short Circuit Current RL = 10Ω 60 100 mA Power Supply Performance PSRR Power Supply Rejection Ratio VS is moved from ±4.5V to ±5.5V 65 83 dB IS Supply Current (Per Amplifier) No load 3.5 4.5 5.5 mA Dynamic Performance SR Slew Rate [2] ±2.5V square wave, measured 25%-75% 35 50 V/µs tS Settling to +0.1% (AV = +1) (AV = +1), VO = 2V step 50 ns BW -3dB Bandwidth 75 MHz HD2 2nd Harmonic Distortion f = 1MHz, VO = 2VP-P, RL = 500Ω, AV = 2 -90 dBc f = 1MHz, VO = 2VP-P, RL = 150Ω, AV = 2 -71 dBc HD3 3rd Harmonic Distortion f = 1MHz, VO = 2VP-P, RL = 500Ω, AV = 2 -99 dBc f = 1MHz, VO = 2VP-P, RL = 150Ω, AV = 2 -69 dBc 1. Measured over operating temperature range 2. Slew rate is measured on rising and falling edges |
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