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EL5396CS Scheda tecnica(PDF) 2 Page - Elantec Semiconductor

Il numero della parte EL5396CS
Spiegazioni elettronici  Triple 400MHz Fixed Gain Amplifier
PDF  13 Pages
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Produttore elettronici  ELANTEC [Elantec Semiconductor]
Homepage  http://www.elantec.com
Logo ELANTEC - Elantec Semiconductor

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EL5396C - Preliminary
Triple 400MHz Fixed Gain Amplifier
Absolute Maximum Ratings (T
A = 25°C)
Values beyond absolute maximum ratings can cause the device to be pre-
maturely damaged. Absolute maximum ratings are stress ratings only
and functional device operation is not implied.
Supply Voltage between VS+ and VS-
11V
Maximum Continuous Output Current
50mA
Operating Junction Temperature
125°C
Power Dissipation
See Curves
Pin Voltages
VS- - 0.5V to VS+ +0.5V
Storage Temperature
-65°C to +150°C
Operating Temperature
-40°C to +85°C
Lead Temperature
260°C
Important Note:
All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the
specified temperature and are pulsed tests, therefore: TJ = TC = TA.
Electrical Characteristics
VS+ = +5V, VS- = -5V, RL = 150Ω, TA = 25°C unless otherwise specified.
Parameter
Description
Conditions
Min
Typ
Max
Unit
AC Performance
BW
-3dB Bandwidth
AV = +1
400
MHz
AV = +2
400
MHz
BW1
0.1dB Bandwidth
35
MHz
SR
Slew Rate
VO = -2.5V to +2.5V, AV = +2
TBD
-2600
V/µs
ts
0.1% Settling Time
VOUT = -2.5V to +2.5V, AV = -1
9
ns
CS
Channel Separation
f = 5MHz
68
dB
en
Input Voltage Noise
3.8
nV/
√Hz
in-
IN- input current noise
25
pA/
√Hz
in+
IN+ input current noise
55
pA/
√Hz
dG
Differential Gain Error [1]
AV = +2
0.035
%
dP
Differential Phase Error [1]
AV = +2
0.04
°
DC Performance
VOS
Offset Voltage
-15
1
15
mV
TCVOS
Input Offset Voltage Temperature Coefficient
Measured from TMIN to TMAX
5
µV/°C
AE
Gain Error
VO = -3V to +3V
-2
1.3
2
%
RF, RG
Internal RF and RG
320
400
480
Ω
Input Characteristics
CMIR
Common Mode Input Range
±3V
±3.3V
V
+IIN
+ Input Current
-120
40
120
µA
-IIN
- Input Current
-40
4
40
µA
RIN
Input Resistance
27
k
Ω
CIN
Input Capacitance
0.5
pF
Output Characteristics
VO
Output Voltage Swing
RL = 150Ω to GND
±3.4V
±3.7V
V
RL = 1KΩ to GND
±3.8V
±4.0V
V
IOUT
Output Current
RL = 10Ω to GND
95
120
mA
Enable (selected packages only)
tEN
Enable Time
40
ns
tDIS
Disable Time
TBD
ns
IIHCE
CE pin Input High Current
CE = VS+
0.8
6
µA
IILCE
CE pin Input Low Current
CE = VS-
0
-0.1
µA
VIHCE
CE pin Input High Voltage for Power Down
VS+ -0.5
V
VILCE
CE pin Input Low Voltage for Power Up
VS+ -3
V



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