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CSD2470 Scheda tecnica(PDF) 1 Page - Continental Device India Limited

Il numero della parte CSD2470
Spiegazioni elettronici  NPN SILICON PLANAR EPITAXIAL TRANSISTOR
PDF  3 Pages
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Produttore elettronici  CDIL [Continental Device India Limited]
Homepage  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

CSD2470 Scheda tecnica(HTML) 1 Page - Continental Device India Limited

  CSD2470 Datasheet HTML 1Page - Continental Device India Limited CSD2470 Datasheet HTML 2Page - Continental Device India Limited CSD2470 Datasheet HTML 3Page - Continental Device India Limited  
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NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CSD2470
TO-92
Plastic Package
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
VALUE
UNITS
Collector Base Voltage
VCBO
15
V
Collector Emitter Voltage
VCEO
10
V
Emitter Base Voltage
VEBO
7.0
V
Collector Current
IC
5.0
A
Collector Current Peak
*ICP
8.0
A
Collector Power Dissipation @ Ta=25ºC
PC
0.4
W
Junction Temperature
Tj
150
ºC
Storage Temperature Range
Tstg
- 55 to +150
ºC
*Single Pulse=10ms
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNITS
Collector Base Voltage
VCBO
IC=50µA, IE=0
15
V
Collector Emitter Voltage
VCEO
IC=1mA, IB=0
10
V
Emitter Base Voltage
VEBO
IE=50µA, IC=0
7
V
Collector Cut off Current
ICBO
VCB=10V, IE = 0
0.1
µA
Emitter Cut off Current
IEBO
VEB=6V, IC = 0
0.5
µA
Collector Emitter Saturation Voltage
VCE(sat)
IC=3A, IB=0.1A
0.5
V
DC Current Gain
hFE
VCE=2V, IC=2A
270
820
Transition Frequency
fT
IC=0.05A, VCE=6V,
f=100MHz
170
MHz
Output Capacitance
Cob
IE=0, VCB=10V, f=1MHz
30
pF
E C
B
Continental Device India Limited
Data Sheet
Page 1 of 3
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company


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