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CLL4150 Scheda tecnica(PDF) 1 Page - Continental Device India Limited |
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CLL4150 Scheda tecnica(HTML) 1 Page - Continental Device India Limited |
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1 / 3 page  HIGH SPEED SILICON DIODES CLL4150 SOD - 80C Mini MELF (LL- 34 ) Polarity: Cathode is indicated by a black band Hermetically Sealed, Glass Silicon Diodes Intended for General Purpose use in Computer and Industrial Application ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL UNIT Repetitive Peak Reverse Voltage VRRM V Continuous Reverse Voltage VR V Continuous Forward Current *IF mA Repetitive Peak Forward Current IFRM mA Non Repetitive Peak Forward Current t=1 µµs IFSM A t=1 ms A t=1 s A Power Dissipation up to Ta=25ºC *Ptot mW Storage Temperature Tstg ºC Junction Temperature Tj ºC THERMAL RESISTANCE Junction to tie point Rth (j-tp) K/W Junction to Ambient in free air *Rth (j-a) K/W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless otherwise specified) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNIT Forward Voltage VF IF=1mA 0.54 0.62 V IF=10mA 0.66 0.74 V IF=50mA 0.76 0.86 V IF=100mA 0.82 0.92 V IF=200mA 0.87 1.00 V Reverse Breakdown Voltage VBR IR=100µA 75 V Reverse Current IR VR= 50V 100 nA VR=50V, Tj=150ºC 100 µA DYNAMIC CHARACTERISTICS Diode Capacitance Cd VR=0V, f=1MHz 2.5 pF Reverse Recovery Time trr IF=10mA, to IR=1mA,RL=100Ω 6.0 ns Measured @ IR=0.1mA . Forward Recovery Time tfr IF=200mA, tr =0.4ns 10 ns Measured @ VF=1V *Device mounted on an FR4 printed circuit board 350 0.5 500 - 65 to 200 200 VALUE 75 50 300 600 4.0 1.0 300 Continental Device India Limited Data Sheet Page 1 of 3 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company CLL4150Rev201002E |
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