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CJD204R Scheda tecnica(PDF) 1 Page - Continental Device India Limited |
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CJD204R Scheda tecnica(HTML) 1 Page - Continental Device India Limited |
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1 / 4 page ![]() PNP SILICON POWER TRANSISTOR CJD204R Pin Configurations:- TO-251 Pin 1 :- Emitter I PAK Plastic Package Pin 2 :- Collector Pin 3 :- Base ABSOLUTE MAXIMUM RATINGS DESCRIPTION UNITS Collector Base Voltage V Collector Emitter Voltage V Emitter Base Voltage V Collector Current (DC) A Collector Current (Peak Value tp=10ms) A Collector Current (Non Repetitive Peak Value tp=2ms) A Base Current A Total Device Dissipation at Tmb=25 ºC W Operating and Storage Junction Temperature Range ºC THERMAL CHARACTERISTICS Junction to Mounting Base K/W Junction to Ambient in free air K/W ELECTRICAL CHARACTERISTICS (Ta=25 ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MAX UNITS Collector Cut Off Current ICEO VCE=30V, IB = 0 0.2 mA Collector Cut Off Current ICBO VCB=40V, IE = 0, Tj=150 ºC 1.0 mA Emitter Cut Off Current IEBO VEB=5V, IC = 0 0.5 mA Collector Emitter Voltage VCEO IC=0.2A, IB=0 V Base Emitter On Voltage *VBE (on) IC=3A, VCE=2V 1.5 V Collector Emitter Saturation Voltage *VCE (sat) IC=3A, IB=0.3A 1.0 V IC=6A, IB=0.6A 1.5 V Base Emitter Saturation Voltage *VBE (sat) IC=6A, IB=0.6A 2.0 V DC Current Gain *hFE IC=2A, VCE=2V Cut Off Frequency f hfe IC=0.3A, VCE=3V kHZ Transition Frequency fT IC=0.3A, VCE=3V, f=1MHZ MHz Forward Bias Second Breakdown Collector Current ISB VCE=40V, tp=0.1s A *Pulse test : Pulse Width < 300 µµs, Duty Cycle < 2% CJD204R Rev300410E SYMBOL VCBO VALUE MIN 60 60 5 8 60 - 65 to +150 Pth (j-mb) 2.08 70 Pth (j-a) 7.0 1.5 VCEO VEBO IC Tj, Tstg Ptot 30 25 60 ICM ICSM IB 12 25 3 Continental Device India Limited Data Sheet Page 1 of 4 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
Codice articolo simile - CJD204R |
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