2N6740 datasheet(2/3 Pages) CDIL

2 / 3 page

Continental Device India Limited

Data Sheet

Page 2 of 3

Derate above 25°C

max.

0.8 W/°C

Junction temperature

max.

150 ºC

Storage temperature

Tstg

–65 to +150 ºC

THERMAL RESISTANCE

From junction to ambient

Rth j–a

70 °C/W

From junction to case

Rth j–c

1.25 °C/W

CHARACTERISTICS

Tamb = 25°C unless otherwise specified

Collector cutoff current

VBE(off) = 1.5 V; VCE = 650 V

ICEV

max.

0.1 mA

VBE(off) = 1.5 V; VCE = 650 V; TC = 125°C

ICEV

max.

1 mA

Emitter cut-off current

IC = 0; VEB = 8V

IEBO

max.

2 mA

Breakdown voltages

IC = 200 mA; IB = 0

VCEO

min.

400 V

IC = 1 mA; VBE = 1.5 V

VCEV

min.

650 V

IE = 1 mA; IC = 0

VEBO

min.

8.0 V

Saturation voltages

IC = 5 A; IB = 1 A

VCEsat*

max.

1.0 V

VBEsat*

max.

1.6 V

IC = 5 A; IB = 1 A; TC = 125°C

VCEsat*

max.

2.0 V

IC = 8 A; IB = 4 A

VCEsat*

max.

2.0 V

D.C. current gain

IC = 5 A; VCE = 3 V

hFE*

min.

max.

Output capacitance at f = 0.1 MHz

IE = 0; VCB = 10 V

max.

300 pF

min.

50 pF

Transition frequency

IC = 200 mA; VCE = 10 V

min.

15 MHz

max.

60 MHz

Small signal current gain

IC = 0.2A; VCE = 10V; f = 5 MHz

|hfe|

min.

max.

Switching time

VCC = 125 V; IC = 5 A

IB = 1 A; tp = 20 µs

Delay time

max.

0.1 µs

Rise time

max.

0.5 µs

VCC = 125 V; IC = 5 A

IB1 = –IB2 = 1 A; tp = 20 µs

Storage time

max.

2.5 µs

Fall time

max.

0.4 µs

Second breakdown collector current

with base forward biased

VCE = 25 V; t = 0.5 s

IS/b

min.

4 A

* Pulsed: pulse duration = 300 µs; duty factor

≤ 2%

2N6740

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