IXYS reserves the right to change limits, test conditions, and dimensions.

IXGC 16N60C2

IXGC 16N60C2D1

IXYS MOSFETs and IGBTs are covered by

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

6,759,692

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

I

C

= 12A; V

8

12

S

Note 2.

C

ies

V

720

pF

C

oes

16N60C2

55

pF

16N60C2D1

65

pF

C

res

19

pF

Q

g

I

32

nC

Q

ge

6nC

Q

gc

10

nC

t

d(on)

25

ns

t

ri

15

ns

t

d(off)

60

120

ns

t

fi

35

100

ns

E

off

60

100

µJ

t

d(on)

25

ns

t

ri

18

ns

E

on

16N60C2D1

0.38

mJ

t

d(off)

115

ns

t

fi

70

ns

E

off

150

µJ

R

thJC

2.0 K/W

R

thCK

0.25

K/W

Inductive load, T

°°°°C

I

V

Note 1

Inductive load, T

°°°°C

I

V

Note 1.

Notes:

1. Switching times may increase for V

or increased R

2. Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

Reverse Diode (FRED)

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

V

F

I

2.66

V

T

1.66

V

I

RM

I

2.5

A

t

rr

V

110

ns

t

rr

I

30

ns

R

thJC

2.5 K/W

ISOPLUS220 Outline