IXTP26P10T datasheet(4/6 Pages) IXYS

4 / 6 page

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTY26P10T

IXTA26P10T

IXTP26P10T

Fig. 7. Input Admittance

-40

-35

-30

-25

-20

-15

-10

-5

-7.5

-7.0

-6.5

-6.0

-5.5

-5.0

-4.5

-4.0

-3.5

-3.0

VGS - Volts

TJ = 125ºC

25ºC

- 40ºC

Fig. 8. Transconductance

-40

-35

-30

-25

-20

-15

-10

-5

ID - Amperes

TJ = - 40ºC

25ºC

125ºC

Fig. 9. Forward Voltage Drop of Intrinsic Diode

-80

-70

-60

-50

-40

-30

-20

-10

-1.4

-1.3

-1.2

-1.1

-1.0

-0.9

-0.8

-0.7

-0.6

-0.5

-0.4

-0.3

VSD - Volts

TJ = 125ºC

TJ = 25ºC

Fig. 10. Gate Charge

-10

-9

-8

-7

-6

-5

-4

-3

-2

-1

QG - NanoCoulombs

VDS = - 50V

I D = -13A

I G = -1mA

Fig. 11. Capacitance

100

1,000

10,000

-40

-35

-30

-25

-20

-15

-10

-5

VDS - Volts

f = 1 MHz

Ciss

Crss

Coss

Fig. 12. Forward-Bias Safe Operating Area

0.1

100

1000

VDS - Volts

TJ = 150ºC

TC = 25ºC

Single Pulse

1ms

100µs

RDS(on) Limit

10ms

100ms

25µs

IXTP26P10T Scheda tecnica(PDF) 4 Page - IXYS Corporation

IXTP26P10T Scheda tecnica(HTML) 4 Page - IXYS Corporation

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