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BC308B Scheda tecnica(PDF) 1 Page - Continental Device India Limited |
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BC308B Scheda tecnica(HTML) 1 Page - Continental Device India Limited |
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1 / 5 page ![]() SILICON PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package General Purpose Transistors Deisgned For Small Signal Amplification From DC To Low Radio Frequencies ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL BC307 BC308 BC309 UNITS Collector Emitter Voltage VCEO 45 25 25 V Collector Base Voltage VCBO 50 30 30 V Emitter Base Voltage VEBO 55 5 V Collector Current Continuous IC 100 mA Power Dissipation@ Ta=25ºC PD 350 mW Derate Above 25ºC 2.8 mW/°C Power Dissipation@ Tc=25ºC PD 1W Derate Above 25ºC 8 mW/°C Operating And Storage Junction Tj, Tstg -55 to +150 °C Temperature Range THERMAL RESISTANCE Junction to ambient Rth(j-a) 357 °C/W Junction to case Rth(j-c) 125 °C/W Continental Device India Limited Data Sheet Page 1 of 5 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
Codice articolo simile - BC308B |
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Descrizione simile - BC308B |
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