2

Absolute

Symbol

Parameter

Units

Maximum

V

d

V

6

I

d

mA

100

P

in

dBm

18

I

ref

Bias Reference Current (pin 4)

mA

10

P

diss

mW

500

T

CH

Channel Temperature

°C

150

T

STG

Storage Temperature

°C

-65 to 150



ch_b

°C/W

115

Notes:

1. Operation of this device in excess of any one of these parameters may cause permanent damage.

2. Assumes DC quiescent conditions.

3. With the DC (typical bias) and RF applied to the device at board temperature T

B

= 25°C.

4. Total dissipation power is referred to lead “x” temperature. Tc=92.5ºC, derate Pdiss at 8.7mW/ºC for Tc>92.5ºC.

5. Thermal resistance measured using 150°C Liquid Crystal Measurement method.

Figure 1. Test circuit of the 2 GHz production test board used for NF, Gain and OIP3 measure-

ments. This circuit achieves a trade-off between optimal NF, Gain, OIP3 and input return loss.

Circuit losses have been de-embedded from actual measurements.

+

1.2 nH

47 pF

1.2 pF

Co-planar with

ground.

length = 0.1

λ

3

1 25

6

4

47 pF

MGA-61563

47 nH

68 pF

10 nF

3V

620

Feedback

Id = I

I

bias

I

ds

Vd

Bias

1, 2, 5

4

3

R

bias

V

bias

Input

match

6

RFin

GND

RFout

Simplified Schematic