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ZXT14P12DX Scheda tecnica(PDF) 1 Page - Diodes Incorporated |
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ZXT14P12DX Scheda tecnica(HTML) 1 Page - Diodes Incorporated |
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1 / 6 page ![]() ISSUE 1 - MARCH 2000 ZXT14P12DX SuperSOT4™ 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY V CEO=-12V; RSAT = 16m ;I C= -6A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Extremely Low Equivalent On Resistance • Extremely Low Saturation Voltage • h FE characterised up to 20A • I C=6A Continuous Collector Current • MSOP8 package APPLICATIONS • DC - DC Converters • Power Management Functions • Power switches • Motor control ORDERING INFORMATION DEVICE REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL ZXT14P12DXTA 7 12mm embossed 1000 units ZXT14P12DXTC 13 12mm embossed 4000 units DEVICE MARKING T14P12DX Top View 1 MSOP8 C E B E E E B C C C C |
Codice articolo simile - ZXT14P12DX |
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