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Motore di ricerca datesheet componenti elettronici |
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Motore di ricerca datesheet componenti elettronici |
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STD25NF10LA Scheda tecnica(PDF) 5 Page - STMicroelectronics |
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STD25NF10LA Scheda tecnica(HTML) 5 Page - STMicroelectronics |
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5 / 15 page  STD25NF10LA Electrical characteristics Doc ID 022319 Rev 1 5/15 Table 6. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current Source-drain current (pulsed) - 25 100 A A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 25 A, VGS = 0 - 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 25 A, di/dt = 100 A/µs, VDD = 50 V, Tj = 150 °C (see Figure 15) - 88 317 7.2 ns nC A |
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