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STP9NM40N Scheda tecnica(PDF) 7 Page - STMicroelectronics |
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STP9NM40N Scheda tecnica(HTML) 7 Page - STMicroelectronics |
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7 / 18 page ![]() STD9NM40N, STP9NM40N Electrical characteristics Doc ID 023762 Rev 2 7/18 Figure 8. Static drain-source on-resistance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Output capacitance stored energy Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Normalized on resistance vs temperature RDS(on) 0.073 0.072 0.071 0.070 0 2 ID(A) ( Ω) 1 3 0.074 0.075 0.076 0.077 VGS=10V 4 5 AM00891v1 VGS 6 4 2 0 0 2 Qg(nC) (V) 8 8 4 6 10 VDD=320V ID=5.6A 10 12 150 100 50 0 200 250 VDS VDS (V) 300 12 14 AM16306v1 C 1000 100 10 1 0.1 10 VDS(V) (pF) 1 100 Ciss Coss Crss AM16308v1 Eoss 0.6 0.4 0.2 0 0 100 VDS(V) (µJ) 350 0.8 200 300 1.0 1.2 1.4 1.6 250 150 50 AM16309v1 VGS(th) 1.00 0.90 0.80 0.70 -50 0 TJ(°C) (norm) -25 75 25 50 100 ID = 250 µA AM07923v1 RDS(on) 1.7 1.3 0.9 0.5 -50 0 TJ(°C) (norm) -25 75 25 50 100 2.1 ID = 2.5 A AM07924v1 |
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